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BD175-6 PDF预览

BD175-6

更新时间: 2024-11-11 20:32:31
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飞兆/仙童 - FAIRCHILD /
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BD175-6 数据手册

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BD175/177/179  
Medium Power Linear and Switching  
Applications  
Complement to BD 176/178/180 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
*Collector-Base Voltage  
Collector-Emitter Voltage  
: BD175  
: BD177  
: BD179  
45  
60  
80  
V
V
V
CBO  
: BD175  
: BD177  
: BD179  
45  
60  
80  
V
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
5
V
A
EBO  
I
I
3
C
7
30  
A
CP  
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD175  
: BD177  
: BD179  
I
= 100mA, I = 0  
45  
60  
80  
V
V
V
C
B
I
Collector Cut-off Current  
: BD175  
: BD177  
: BD179  
V
V
V
= 45V, I = 0  
100  
100  
100  
µA  
µA  
µA  
CBO  
CB  
CB  
CB  
E
= 60V, I = 0  
E
= 80V, I = 0  
E
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
1
mA  
EBO  
EB  
C
h
h
V
V
= 2V, I = 150mA  
40  
15  
250  
FE1  
FE2  
CE  
CE  
C
= 2V, I = 1A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter On Voltage  
I
= 1A, I = 0.1A  
0.8  
1.3  
V
V
CE  
C
B
(on)  
V
V
= 2V, I = 1A  
C
BE  
CE  
CE  
f
Current Gain Bandwidth Product  
= 10V, I = 250mA  
3
MHz  
T
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
h
Classificntion  
FE  
Classification  
6
10  
16  
100 ~ 250  
h
40 ~ 100  
63 ~ 160  
FE1  
* Classification 16: Only BD175  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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