Datasheet > BD175-6

BD175-6

更新时间： 2024-02-08 08:08:00

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BD175-6 数据手册

BD175/177/179

Medium Power Linear and Switching

Applications

•

Complement to BD 176/178/180 respectively

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

*Collector-Base Voltage

Collector-Emitter Voltage

: BD175

: BD177

: BD179

CBO

: BD175

: BD177

: BD179

CEO

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

EBO

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

(sus)

* Collector-Emitter Sustaining Voltage

CEO

: BD175

: BD177

: BD179

= 100mA, I = 0

Collector Cut-off Current

: BD175

: BD177

: BD179

= 45V, I = 0

100

µA

CBO

= 60V, I = 0

= 80V, I = 0

Emitter Cut-off Current

* DC Current Gain

= 5V, I = 0

EBO

= 2V, I = 150mA

250

FE1

FE2

= 2V, I = 1A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter On Voltage

= 1A, I = 0.1A

0.8

1.3

(on)

= 2V, I = 1A

Current Gain Bandwidth Product

= 10V, I = 250mA

MHz

* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed

Classificntion

Classification

100 ~ 250

40 ~ 100

63 ~ 160

FE1

* Classification 16: Only BD175

Rev. A, February 2000

12 3 4

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