Datasheet > BCW68

BCW68

更新时间： 2023-12-06 20:09:56

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1064K
描述
双极型晶体管

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCW68 数据手册

BCW67/BCW68

PNP General Purpose Amplifier

FEATURES

SOT-23

Min

Dim

Max

3.10

1.50

For general AF applications.

2.70

High current gain.

1.10

Low collector-emitter saturation voltage.

Complementary types:BCW65,BCW66(NPN).

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

1.80

0.02

APPLICATIONS

This device is designed for general purpose amplifier

0.1 Typical

and switching applications.

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

Type No.

Marking

Package Code

BCW67A/B/C

BCW68F/G/H

DA/DB/DC

DF/DG/DH

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

BCW67

BCW68

Unit

Collector-Base Voltage

V_CBO

-45

-60

-45

-5

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_CM

-32

--5

Peak collector current

-1

Collector Current -Continuous

Total Device Dissipation

Junction thermal resistance

Junction and Storage Temperature

I_C

-800

℃/W

℃

P_D

330

R_thJS

T_j,T_stg

215

-65 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP

MAX

UNIT

I_C=-10μA I_E=0

BCW67

BCW68

-45

-60

Collector-base breakdown voltage

V_(BR)CBO

I_C=-10mA I_B=0

BCW67 -32

BCW68 -45

Collector-emitter breakdown voltage V_(BR)CEO

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

I_E=-10μA I_C=0

-5

V_CB=-32V I_E=0

V_CB=-45V I_E=0

BCW67

BCW68

-20

Emitter cut-off current

I_EBO

V_EB=-4V I_C=0

-20

DC current gain

A/F

B/G

C/H

A/F

B/G

C/H

A/F

B/G

C/H

A/F

B/G

C/H

h_FE

V_CE=-10V I_C=-0.1mA

V_CE=-1V I_C=-10mA

V_CE=-1V I_C=-100mA

V_CE=-2V I_C=-500mA

120

180

100

160

250

160

250

400

630

250

350

100

I_C=-100mA I_B=-10mA

I_C=-500mA I_B=-50mA

I_C=-100mA I_B=-10mA

I_C=-500mA I_B=-50mA

V_CE=-5V I_C=-50mA

f=20MHz

-0.3

-0.7

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

-1.25

-2

200

MHz

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

下载PDF

与BCW68相关器件

型号	品牌	描述	获取价格	数据表
BCW68BK	CENTRAL	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,	获取价格
BCW68BKLEADFREE	CENTRAL	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,	获取价格
BCW68F	CENTRAL	SURFACE MOUNT PNP SILICON TRANSISTOR	获取价格
BCW68F	RECTRON	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)	获取价格
BCW68F	INFINEON	PNP Silicon AF Transistors (For general AF applications High current gain)	获取价格
BCW68F	ZETEX	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR	获取价格