Datasheet > BCW61B-GS18

BCW61B-GS18

更新时间： 2024-02-05 20:34:33

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	86K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BCW61B-GS18 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	30
JESD-609代码：	e3	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.25 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

BCW61B-GS18 数据手册

BCW61 Series

Vishay Semiconductors

VISHAY

Small Signal Transistors (PNP)

Features

• PNP Silicon Epitaxial Planar Transistors

• Suited for low level, low noise, low frequency

applications in hybrid cicuits.

• Low Current, Low Voltage.

• As complementary types, BCW60 Series NPN

transistors are recommended.

18978

Mechanical Data

Case: SOT-23 Plastic case

Weight: approx. 8.8 mg

Marking:

Packaging Codes/Options:

BCW61A = BA

BCW61B = BB

BCW61C = BC

BCW61D = BD

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Pinning:

1 = Base, 2 = Emitter, 3 = Collector

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

amb

Test condition

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current (DC)

Peak collector current

Base current (DC)

- V

CEO

CBO

EBO

5.0

100

200

- I

Power dissipation

T = 25 °C

250

tot

Maximum Thermal Resistance

Parameter

Test condition

Symbol

Value

150

Unit

°C

Maximum junction temperature

Storage temperature range

- 65 to + 150

°C

Thermal resistance junction to

ambient air

°C/W

500

Mounted an FR-4 printed-circuit board.

Document Number 85136

Rev. 1.2, 19-Aug-04

www.vishay.com

12 3 4

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