Datasheet > BCW60C,235

BCW60C,235

更新时间： 2022-09-29 11:50:08

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
7页	330K
描述
TRANS NPN 32V 0.1A SOT23

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BCW60C,235 数据手册

NXP Semiconductors

Product data sheet

NPN general purpose transistors

BCW60 series

FEATURES

PINNING

• Low current (max. 100 mA)

• Low voltage (max. 32 V).

DESCRIPTION

base

emitter

collector

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

handbook, halfpage

NPN transistor in a SOT23 plastic package.

PNP complements: BCW61 series.

MARKING

TYPE NUMBER

BCW60B

MARKING CODE⁽¹⁾

Top view

MAM255

AB∗

AC∗

AD∗

BCW60C

BCW60D

Fig.1 Simplified outline (SOT23) and symbol.

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

UNIT

V_CBO

V_CEO

V_EBO

I_C

−

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

open base

open collector

100

200

250

+150

150

+150

°C

I_CM

I_BM

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C

−65

−

°C

T_amb

−65

°C

1999 Apr 22

1 234 5 6 7

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