Datasheet > BCR5CM-12LB

BCR5CM-12LB

更新时间： 2022-04-20 21:56:39

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	132K
描述
600V - 5A - Triac Medium Power Use

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BCR5CM-12LB 数据手册

BCR5CM-12LB

Preliminary

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

I_DRM

Min.

—

Typ.

—

Max.

2.0

Unit

Test conditions

Tj = 150°C, V_DRMapplied

V_TM

—

1.8

Tc = 25°C, I_TM= 7 A,

Instantaneous measurement

Gate trigger voltage^Note2

III

V_FGT

—

1.5

Tj = 25°C, V_D= 6 V, R_L= 6 ,

R_G= 330 

V_RGT

—

1.5

III

Gate trigger current^Note2

I_FGT

—

20^Note6

—

Tj = 25°C, V_D= 6 V, R_L= 6 ,

R_G= 330 

III

I_RGT

—

I_RGT

—

III

Gate non-trigger voltage

Thermal resistance

V_GD

0.2/0.1

Tj = 125°C/150°C,

V_D= 1/2 V_DRM

Junction to case^{Note3 Note4}

R_th(j-c)

—

3.0

—

°C/W

Critical-rate of rise of off-state

commutating voltage^Note5

(dv/dt)c

5/1

V/s

Tj = 125°C/150°C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T₂tab 1.5 mm away from the molded case.

4. The contact thermal resistance R_{th (c-f)}in case of greasing is 1.0°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

6. High sensitivity (I_GT 10 mA) is also available. (I_GTitem: 1)

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125°C/150°C

2. Rate of decay of on-state commutating current

(di/dt)c = – 2.5 A/ms

(di/dt)c

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS1026EJ0100 Rev.1.00

Feb 25, 2013

Page 2 of 7

123 4 5 6 7 8

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