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BCR5KM

更新时间: 2024-11-08 22:24:39
品牌 Logo 应用领域
三菱 - MITSUBISHI 触发装置三端双向交流开关局域网
页数 文件大小 规格书
5页 52K
描述
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR5KM 技术参数

生命周期:Transferred零件包装代码:TO-220FN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.26其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:SINGLE
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:5 A
断态重复峰值电压:600 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

BCR5KM 数据手册

 浏览型号BCR5KM的Datasheet PDF文件第2页浏览型号BCR5KM的Datasheet PDF文件第3页浏览型号BCR5KM的Datasheet PDF文件第4页浏览型号BCR5KM的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5KM  
MEDIUM POWER USE  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
BCR5KM  
OUTLINE DRAWING  
Dimensions in mm  
10 ± 0.3  
2.8 ± 0.2  
φ
3.2 ± 0.2  
1.1 ± 0.2  
1.1 ± 0.2  
E
0.75 ± 0.15  
2.54 ± 0.25  
0.75 ± 0.15  
2.54 ± 0.25  
Measurement point of  
case temperature  
➂  
T
1
TERMINAL  
TERMINAL  
..................................................................  
IT (RMS)  
5A  
T2  
......................................................  
...................  
GATE TERMINAL  
VDRM  
400V / 600V  
2  
IFGT !, IRGT ! , IRGT #  
UL Recognized : File No. E80271  
15mA (10mA)  
TO-220FN  
APPLICATION  
Control of heater such as electric rice cooker, electric pot  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
Repetitive peak off-state voltage1  
Non-repetitive peak off-state voltage1  
VDRM  
VDSM  
400  
500  
600  
720  
V
V
Symbol  
IT (RMS)  
ITSM  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
Unit  
A
Commercial frequency, sine full wave 360° conduction, Tc=103°C  
5
50  
A
60Hz sinewave 1 full cycle, peak value, non-repetitive  
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
I2t  
I2t for fusing  
10.4  
A2s  
PGM  
PG (AV)  
VGM  
IGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
3
W
W
V
0.3  
10  
Peak gate current  
2
A
–40 ~ +125  
–40 ~ +125  
2.0  
°C  
°C  
g
Junction temperature  
Storage temperature  
Weight  
Tstg  
Viso  
Isolation voltage  
T
a
=25°C, AC 1 minute, T  
1
· T  
2
· G terminal to case  
2000  
V
1. Gate open.  
Feb.1999  

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