Datasheet > BCR30FM-8LBBB0

BCR30FM-8LBBB0

更新时间： 2022-05-28 07:38:06

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
4页	62K
描述
400V - 30A - Triac Medium Power Use

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数据手册

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BCR30FM-8LBBB0 数据手册

BCR30FM-8LB

Preliminary

Electrical Characteristics

Parameter

Symbol

Min.

—

Typ.

—

Max.

3.0

Unit

Test conditions

Repetitive peak off-state current

I_DRM

Tj = 125C, V_DRMapplied

Tj = 150C, V_DRMapplied

—

5.0

On-state voltage

V_TM

—

1.5

Tc = 25C, I_TM= 45 A,

instantaneous measurement

Gate trigger voltage^Note2









V_FGT

—

2.0

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 



V_RGT



V_RGT



Gate trigger curent^Note2

I_FGT

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 







I_RGT



I_RGT



Gate non-trigger voltage

Thermal resistance

V_GD

0.2

0.1

—

Tj = 125C, V_D= 1/2 V_DRM

Tj = 150C, V_D= 1/2 V_DRM

Junction to case^Note3

Tj = 125C

R_{th (j-c)}

3.0

—

C/W

V/s

Critical-rate of rise of off-state

commutation voltage^Note4

(dv/dt)c

—

Tj = 150C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance R_{th (c-f)}in case of greasing is 0.5C/W.

4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

5. Make sure that your finished product containing this device meets your safe isolation requirements.

For safety, it's advisable that heatsink is electrically floating.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125C/150C

2. Rate of decay of on-state commutating current

(di/dt)c = –16 A/ms

(di/dt)c

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0965EJ0001 Rev.0.01

Nov 28, 2012

Page 2 of 3

123 4

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