Datasheet > BCR22PNH6327

BCR22PNH6327

更新时间： 2022-06-02 18:08:09

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体数字晶体管
页数	文件大小	规格书
7页	533K
描述
NPN/PNP Silicon Digital Transistor Array

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数据手册

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BCR22PNH6327 数据手册

BCR22PN

Electrical Characteristics at T =25°C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

min.

DC Characteristics for NPN and PNP Types

Collector-emitter breakdown voltage

(BR)CEO

I = 100 µA, I = 0

Collector-base breakdown voltage

I = 10 µA, I = 0

(BR)CBO

Collector cutoff current

= 40 V, I = 0

100 nA

350 µA

CBO

Emitter cutoff current

= 10 V, I = 0

EBO

DC current gain 1)

I = 5 mA, V = 5 V

0.3

Collector-emitter saturation voltage1)

I = 10 mA, I = 0.5 mA

CEsat

i(off)

Input off voltage

I = 100 µA, V = 5 V

0.8

1.5

2.5

Input on Voltage

I = 2 mA, V = 0.3 V

i(on)

0.9

1.1

Input resistor

Resistor ratio

R /R

kΩ

AC Characteristics for NPN and PNP Types

Transition frequency

130

MHz

I = 10 mA, V = 5 V, f = 100 MHz

Collector-base capacitance

= 10 V, f = 1 MHz

1) Pulse test: t < 300µs; D < 2%

2011-07-28

123 4 5 6 7

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