Datasheet > BCR22PNQ62702C2375

BCR22PNQ62702C2375

更新时间： 2024-11-25 23:34:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	67K
描述
TRANSISTOR DIGITAL SOT363

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中文翻译

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数据手册

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BCR22PNQ62702C2375 数据手册

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BCR 22PN

NPN/PNP Silicon Digital Tansistor Array

• Switching circuit, inverter, interface circuit,

drive circuit

• Two (galvanic) internal isolated NPN/PNP

Transistor in one package

Ω

• Built in bias resistor (R =22k , R =22k )

Tape loading orientation

Type

Marking Ordering Code Pin Configuration

Package

BCR 22PN WPs

Q62702-C2375 1=E1 2=B1 3=C2 4= E2 5=B2 6= C1 SOT-363

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Input on Voltage

CEO

CBO

EBO

i(on)

DC collector current

100

°C

Total power dissipation, T = 115°C

250

tot

Junction temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction ambient

275

K/W

thJA

Junction - soldering point

≤ 140

thJS

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm²Cu

Semiconductor Group

Nov-26-1996

12 3 4 5

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