Datasheet > BCR16PM-16LH-B00

BCR16PM-16LH-B00

更新时间： 2022-10-15 10:06:53

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	94K
描述
Triac medium Power Use

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数据手册

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BCR16PM-16LH-B00 数据手册

BCR16PM-16LH

Preliminary

Latching Current vs.

Junction Temperature

Breakover Voltage vs.

Junction Temperature

10³

10²

10¹

160

140

120

100

Typical Example

Distribution

–

, G

Typical Example

–

, G

Typical Example

40 80

10⁰

–40

120

160

120

160

Junction Temperature (°C)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (Tj=125°C)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (Tj=150°C)

160

Typical Example

Tj = 125°C

Tj = 150°C

140

120

100

140

120

100

III Quadrant

I Quadrant

10¹

10²

10³

10⁴

10¹

10²

10³

10⁴

Rate of Rise of Off-State Voltage (V/μs)

Commutation Characteristics (Tj=125°C)

Commutation Characteristics (Tj=150°C)

10²

Time

Main Voltage

(dv/dt)c

Main Current

Time

Main Voltage

(dv/dt)c

Main Current

III Quadrant

(di/dt)c

Time

(di/dt)c

Time

Minimum

Value

(I_GTitem1)

10¹

I Quadrant

Typical Example

Tj = 150°C

Typical Example

Tj = 125°C

= 4A

Minimum

Value

τ = 500μs,

= 200V

τ = 500μs,

= 200V

f = 3Hz

10⁰

10¹

10²

10¹

10²

Rate of Decay of On-State

Commutating Current (A/ms)

Rate of Decay of On-State

Commutating Current (A/ms)

R07DS0505EJ0100 Rev.1.00

Jul 07, 2011

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