Datasheet > BCR16PM-16LH-1AS-B00

BCR16PM-16LH-1AS-B00

更新时间： 2022-10-15 10:06:53

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	94K
描述
Triac medium Power Use

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BCR16PM-16LH-1AS-B00 数据手册

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BCR16PM-16LH

Preliminary

Electrical Characteristics

BCR16PM-16LH-1

BCR16PM-16LH

Parameter

Symbol

Unit

Test conditions

(I_GTitem : 1)

Min.

Typ. Max. Min. Typ. Max.

Tj = 150C

V_DRMapplied

Repetitive peak off-state current

On-state voltage

I_DRM

V_TM

—

5.0

1.5

—

5.0

1.5

Tc = 25C, I_TM= 25 A

instantaneous

—

measurement

Gate trigger voltage^Note2

Gate trigger curent^Note2









V_FGT

—

1.5

—

1.5

Tj = 25C, V_D= 6 V

R_L= 6 , R_G= 330 



V_RGT







Tj = 25C, V_D= 6 V

R_L= 6 , R_G= 330 

I_FGT

I_RGT







I_RGT



Tj = 125C

Gate non-trigger voltage

V_GD

0.2

—

0.2

—

V_D= 1/2 V_DRM

Tj = 150C

0.1

—

0.1

—

V_D= 1/2 V_DRM

Junction to case^Note3

3.5 C/W

Thermal resistance

R_{th (j-c)}

—

3.5

—

Tj = 125C

A/ms

Critical-rate of decay of on-state (di/dt)c

commutating current ^Note4

—

(dv/dt)c < 100 V/s

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance R_{th (c-f)}in case of greasing is 0.5C/W.

4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.

Test conditions

1. Junction temperature

Commutating voltage and current waveforms

(inductive load)

Time

Supply Voltage

Tj = 125C

2. Peak off-state voltage

V_D= 400 V

(di/dt)c

Time

Main Current

Main Voltage

2. Rate of rise of off-state commutating voltage

Time

(dv/dt)c < 100 V/s

(dv/dt)c

R07DS0505EJ0100 Rev.1.00

Jul 07, 2011

Page 2 of 7

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