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BCR16PM-12LD PDF预览

BCR16PM-12LD

更新时间: 2024-02-13 05:52:32
品牌 Logo 应用领域
瑞萨 - RENESAS 可控硅
页数 文件大小 规格书
8页 119K
描述
Triac Medium Power Use

BCR16PM-12LD 技术参数

生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.19其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:SINGLE
换向电压的临界上升率-最小值:10 V/us最大直流栅极触发电流:30 mA
最大直流栅极触发电压:1.5 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:16 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

BCR16PM-12LD 数据手册

 浏览型号BCR16PM-12LD的Datasheet PDF文件第2页浏览型号BCR16PM-12LD的Datasheet PDF文件第3页浏览型号BCR16PM-12LD的Datasheet PDF文件第4页浏览型号BCR16PM-12LD的Datasheet PDF文件第6页浏览型号BCR16PM-12LD的Datasheet PDF文件第7页浏览型号BCR16PM-12LD的Datasheet PDF文件第8页 
BCR16PM-12LD  
Holding Current vs.  
Junction Temperature  
Latching Current vs.  
Junction Temperature  
103  
7
103  
7
Typical Example  
Distribution  
+
T
, G  
5
2
5
Typical Example  
3
2
102  
7
5
3
2
102  
7
3
2
101  
7
5
+
+
, G  
Typical Example  
T
2
3
2
5
T
, G  
Typical Example  
2
3
2
101  
100  
–604020 0 20 40 60 80 100120140 160  
–604020 0 20 40 60 80 100 120 140160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Junction Temperature  
Breakover Voltage vs. Rate of  
Rise of Off-State Voltage (Tj = 125°C)  
160  
160  
Typical Example  
Typical Example  
Tj = 125°C  
140  
120  
100  
80  
140  
120  
100  
80  
III Quadrant  
I Quadrant  
60  
60  
40  
40  
20  
20  
0
0
–60 –4020 0 20 40 60 80 100120140160  
101  
2
3
5 7102  
2
3
5 7103  
2
3
5 7104  
Junction Temperature (°C)  
Rate of Rise of Off-State Voltage (V/µs)  
Breakover Voltage vs. Rate of  
Rise of Off-State Voltage (Tj = 150°C)  
Commutation Characteristics (Tj = 125°C)  
7
160  
Time  
Main Voltage  
Typical Example  
Tj = 150°C  
5
(dv/dt)c  
V
D
140  
120  
100  
80  
III Quadrant  
Main Current  
3
2
(di/dt)c  
Time  
I
T
τ
III Quadrant  
101  
I Quadrant  
7
5
Minimum  
Characteristics  
Value  
60  
I Quadrant  
3
2
Typical Example  
Tj = 125°C, I = 4 A  
τ = 500 µs, V = 200 V  
40  
T
20  
D
100  
7
f = 3 Hz  
0
101  
2
3
5 7102  
2
3
5 7103  
2
3
5 7104  
100  
2
3
5 7 101  
2
3
5 7 102  
Rate of Rise of Off-State Voltage (V/µs)  
Rate of Decay of On-State  
Commutating Current (A/ms)  
REJ03G1562-0100 Rev.1.00 Jul 06, 2007  
Page 5 of 7  

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