5秒后页面跳转
BCR12PM-14 PDF预览

BCR12PM-14

更新时间: 2024-01-23 20:39:48
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网
页数 文件大小 规格书
5页 64K
描述
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR12PM-14 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.24Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SINGLE换向电压的临界上升率-最小值:10 V/us
最大直流栅极触发电流:30 mA最大直流栅极触发电压:1.5 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大漏电流:2 mA湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:12 A
断态重复峰值电压:800 V子类别:TRIACs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:20
触发设备类型:TRIACBase Number Matches:1

BCR12PM-14 数据手册

 浏览型号BCR12PM-14的Datasheet PDF文件第1页浏览型号BCR12PM-14的Datasheet PDF文件第3页浏览型号BCR12PM-14的Datasheet PDF文件第4页浏览型号BCR12PM-14的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR12PM-14  
MEDIUM POWER USE  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
Typ.  
Max.  
2.0  
1.6  
1.5  
1.5  
1.5  
30  
mA  
V
IDRM  
Repetitive peak off-state current  
On-state voltage  
Tj=125°C, VDRM applied  
VTM  
Tc=25°C, ITM=20A, Instantaneous measurement  
!
@
#
!
@
#
VFGT !  
VRGT !  
VRGT #  
IFGT !  
IRGT !  
IRGT #  
VGD  
V
2  
V
Gate trigger voltage  
Tj=25°C, VD=6V, RL=6, RG=330Ω  
V
mA  
mA  
mA  
V
2  
30  
Gate trigger current  
Tj=25°C, VD=6V, RL=6, RG=330Ω  
Tj=125°C, VD=1/2VDRM  
30  
0.2  
Gate non-trigger voltage  
Thermal resistance  
4  
3.5  
°C/W  
Rth (j-c)  
Junction to case  
Critical-rate of rise of off-state  
commutating voltage  
3  
V/µs  
(dv/dt)c  
2. Measurement using the gate trigger characteristics measurement circuit.  
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.  
4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
(dv/dt) c  
Voltage  
class  
VDRM  
(V)  
Commutating voltage and current waveforms  
(inductive load)  
Test conditions  
Symbol  
Min.  
Unit  
SUPPLY  
1. Junction temperature  
VOLTAGE  
TIME  
R
Tj=125°C  
2. Rate of decay of on-state commutat-  
ing current  
(di/dt)c=–6.0A/ms  
(di/dt)c  
MAIN CURRENT  
14  
700  
V/µs  
TIME  
TIME  
MAIN  
VOLTAGE  
3. Peak off-state voltage  
VD=400V  
L
10  
(dv/dt)c  
VD  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
102  
200  
180  
160  
140  
120  
100  
80  
7
5
3
2
Tj = 125°C  
101  
7
5
3
2
Tj = 25°C  
100  
7
5
3
2
60  
40  
20  
10–1  
0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Feb.1999  

与BCR12PM-14相关器件

型号 品牌 描述 获取价格 数据表
BCR12PM14L ETC TRIAC|700V V(DRM)|12A I(T)RMS|TO-220AB

获取价格

BCR12PM-14L RENESAS Triac Medium Power Use

获取价格

BCR12PM-14LA RENESAS Triac Medium Power Use

获取价格

BCR12PM-14LA-A8 RENESAS Triac Medium Power Use

获取价格

BCR12PM-14LG RENESAS Triac Medium Power Use

获取价格

BCR12PM-14LG-A8 RENESAS Triac Medium Power Use

获取价格