Datasheet > BCR10CS-12LB_10

BCR10CS-12LB_10

更新时间： 2022-10-15 10:04:28

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
9页	137K
描述
Triac Medium Power Use

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BCR10CS-12LB_10 数据手册

BCR10CS-12LB

Preliminary

Performance Curves

Maximum On-State Characteristics

Rated Surge On-State Current

10²

100

Tj = 150°C

10¹

Tj = 25°C

10⁰

4 5

10¹

3 4 5 7 10²

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

On-State Voltage (V)

Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Junction Temperature

Gate Characteristics (I, II and III)

10³

Typical Example

= 10V

= 5W

10¹

, I

RGT I RGT III

0.5W

G(AV)

= 2A

= 1.5V

10²

10⁰

FGT I

, I

RGT I

FGT I RGT III

10^–1

= 0.1V

10¹

10¹2 3 5 7 10²2 3 5 7 10³2 3 5 7 10⁴

–60–40–20 0 20 40 60 80 100120140160

Gate Current (mA)

Junction Temperature (°C)

Gate Trigger Voltage vs.

Junction Temperature

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

10²2 3 5 7 10³

10³

2.4

Typical Example

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

10²

10¹

10^–12 3 5 7 10⁰2 3 5 7 10¹2 3 5 7 10²

–60–40–20 0 20 40 60 80 100120140160

Junction Temperature (°C)

Conduction Time (Cycles at 60Hz)

R07DS0224EJ0400 Rev.4.00

Dec 14, 2010

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