Datasheet > BCR10CS-12LB_10

BCR10CS-12LB_10

更新时间： 2022-10-15 10:04:28

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
9页	137K
描述
Triac Medium Power Use

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BCR10CS-12LB_10 数据手册

BCR10CS-12LB

Preliminary

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

I_DRM

Min.

—

Typ.

—

Max.

2.0

Unit

Test conditions

Tj = 150C, V_DRMapplied

V_TM

—

1.5

Tc = 25C, I_TM= 15 A,

Instantaneous measurement

Gate trigger voltage^Note2









V_FGT

—

1.5

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 



V_RGT



V_RGT

1.5



Gate trigger current^Note2

I_FGT

30^Note6

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 







I_RGT



I_RGT



Gate non-trigger voltage

Thermal resistance

V_GD

0.2/0.1

—

1.8

—

Tj = 125C/150C, V_D= 1/2 V_DRM

Junction to case^{Note3 Note4}

Tj = 125C/150C

R_{th (j-c)}

(dv/dt)c

C/W

V/s

Critical-rate of rise of off-state

commutating voltage^Note5

10/1

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured on the T₂tab.

4. The contact thermal resistance R_{th (c-f)}in case of greasing is 1.0°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

6. High sensitivity (I_GT 20 mA) is also available. (I_GTitem: 1)

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125C/150C

2. Rate of decay of on-state commutating current

(di/dt)c = – 5.0 A/ms

(di/dt)c

Time

Main Current

Main Voltage

Time

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0224EJ0400 Rev.4.00

Dec 14, 2010

Page 2 of 8

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