Datasheet > BCP5616QTC

BCP5616QTC

更新时间： 2022-02-26 12:25:53

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	380K
描述
80V NPN MEDIUM POWER TRANSISTOR

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BCP5616QTC 数据手册

BCP5616Q

Absolute Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

100

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Collector Current

Continuous Base Current

Peak Pulse Base Current

I_CM

100

200

I_B

I_BM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 6)

(Note 7)

P_D

R_θJA

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Leads

Operating and Storage Temperature Range

°C/W

°C/W

°C

19.4

R_θJL

-65 to +150

T_J,T_STG

ESD Ratings (Note 8)

Characteristic

Electrostatic Discharge – Human Body Model

Electrostatic Discharge – Machine Model

Symbol

ESD HBM

ESD MM

Value

4,000

400

Unit

JEDEC Class

Notes:

6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady-state.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

2 of 7

www.diodes.com

June 2016

BCP5616Q

Datasheet Number: DS36981 Rev. 3 - 2

123 4 5 6 7

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