Datasheet > BCP55-16

BCP55-16

更新时间： 2024-04-09 18:58:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	381K
描述
60V,1A,General Purpose NPN Bipolar Transistor

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BCP55-16 数据手册

NPN Silicon Epitaxial Planar Transistor

BCP55

Electrical Characteristics (@T_A=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

V_CB=30V,I_E=0

I_C=0,V_EB=5V

MIN

TYP

MAX

100

UNIT

Collector cut-off current

I_CBO

Emitter cut-off current

DC Current Gain

I_EBO

100

V_CE=2V, I_C=150 mA

BCP55

h_FE

250

0.5

BCP55-16

100

Collector-Emitter Saturation Voltage ^{(Note 2)}

Base-emitter Voltage

V_CE(sat)

V_BE

I_C=0.5A,I_B=50mA

I_C=0.5A,V_CE=2V

V_CE=10V, I_C=50mA

f=100MHz

Transition frequency

f_T

100

MHz

Ratings and Characteristic Curves (T_A=25℃ unless otherwise noted)

STM0265A: September 2019

www.gmesemi.com

123 4

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