Datasheet > BCP52-10

BCP52-10

更新时间： 2024-04-09 18:58:00

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	415K
描述
60V,1A,General Purpose PNP Bipolar Transistor

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BCP52-10 数据手册

PNP Silicon Epitaxial Planar Transistor

BCP51 BCP52 BCP53

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation ( T_A= 25°C ) ^*1

Thermal Resistance Junction-to-Air ^*2

Thermal Resistance Junction-to-Case ^*2

Thermal Resistance Junction-to-Lead ^*2

Operating junction Temperature

P_D

R_θJA

R_θJC

R_θJL

T_J

1.5

104

°C/W

°C

-55 ~ +150

Storage Temperature Range

Notes:

T_STG

°C

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93

sq. in.

2. The data tested by surface mounted on a 20mm * 15mm * 1mm FR4-epoxy P.C.B

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min. Typ. Max. Unit

I_C= -100μA, I_E= 0

BCP51

-45

Collector-Base Breakdown Voltage

V_(BR)CBO

BCP52

-60

BCP53

-100

I_C= -10mA, I_B= 0

BCP51

-45

-60

-80

Collector-Emitter Breakdown Voltage

V_(BR)CEO

BCP52

BCP53

Emitter-Base Breakdown Voltage

Collector Cut-off Current

V_(BR)EBOI_E= -10μA, I_C= 0

-5

-100

I_CBO

V_CB= -30V, I_E= 0

V_CE= -2V, I_C= -5mA

V_CE= -2V, I_C= -150 mA

BCP51/52/53

250

160

250

DC Current Gain

h_FE

BCP51/52/53-10

BCP51/52/53-16

100

V_CE= -2V, I_C= -500mA

I_C= -500mA, I_B= -50mA

I_C= -500mA, V_CE= -2V

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(sat)

V_BE(on)

-0.5

-1

V_CE= -10V, I_C= -50mA

f = 20MHz

Transition Frequency

f_T

125

MHz

STM0364A: April 2023 [2.0]

www.gmesemi.com

123 4

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