5秒后页面跳转
BCP52-10,135 PDF预览

BCP52-10,135

更新时间: 2024-02-13 04:52:27
品牌 Logo 应用领域
其他 - ETC 开关光电二极管晶体管
页数 文件大小 规格书
22页 1738K
描述
TRANS PNP 60V 1A SOT223

BCP52-10,135 技术参数

生命周期:Active零件包装代码:SC-73
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantHTS代码:8541.21.00.75
风险等级:1.43Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):63JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP功耗环境最大值:1.5 W
认证状态:Not Qualified参考标准:IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):145 MHzBase Number Matches:1

BCP52-10,135 数据手册

 浏览型号BCP52-10,135的Datasheet PDF文件第3页浏览型号BCP52-10,135的Datasheet PDF文件第4页浏览型号BCP52-10,135的Datasheet PDF文件第5页浏览型号BCP52-10,135的Datasheet PDF文件第7页浏览型号BCP52-10,135的Datasheet PDF文件第8页浏览型号BCP52-10,135的Datasheet PDF文件第9页 
BCP52; BCX52; BC52PA  
Nexperia  
60 V, 1 A PNP medium power transistors  
6. Thermal characteristics  
Table 7.  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from  
junction to ambient  
in free air  
[1]  
[2]  
[3]  
[1]  
[2]  
[3]  
[1]  
[2]  
[3]  
[4]  
[5]  
BCP52  
BCX52  
BC52PA  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
192  
125  
93  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
250  
132  
93  
298  
151  
114  
154  
76  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
BCP52  
BCX52  
BC52PA  
-
-
-
-
-
-
16  
16  
20  
K/W  
K/W  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.  
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.  
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.  
BCP52_BCX52_BC52PA  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 9 — 18 October 2011  
6 of 22  

与BCP52-10,135相关器件

型号 品牌 获取价格 描述 数据表
BCP52-10E6327 ROCHESTER

获取价格

1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR
BCP52-10T NEXPERIA

获取价格

60 V, 1 A PNP medium power transistorsProduction
BCP5210TA DIODES

获取价格

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
BCP52-10TA DIODES

获取价格

1A, 60V, PNP, Si, POWER TRANSISTOR
BCP52-10-TAPE-13 NXP

获取价格

TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP52-10-TAPE-7 NXP

获取价格

TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP52-10TC ZETEX

获取价格

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP5216 DIODES

获取价格

PNP, 60V, 1A, SOT223
BCP5216 STMICROELECTRONICS

获取价格

LOW POWER PNP TRANSISTOR
BCP52-16 INFINEON

获取价格

PNP Silicon AF Transistors (For AF driver and output stages High collector current)