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BC850W PDF预览

BC850W

更新时间: 2024-01-26 14:04:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管光电二极管放大器
页数 文件大小 规格书
8页 233K
描述
PNP Silicon AF Transistors

BC850W 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.6 VBase Number Matches:1

BC850W 数据手册

 浏览型号BC850W的Datasheet PDF文件第2页浏览型号BC850W的Datasheet PDF文件第3页浏览型号BC850W的Datasheet PDF文件第4页浏览型号BC850W的Datasheet PDF文件第5页浏览型号BC850W的Datasheet PDF文件第6页浏览型号BC850W的Datasheet PDF文件第7页 
BC856W...BC860W  
PNP Silicon AF Transistors  
For AF input stages and driver applications  
High current gain  
3
Low collector-emitter saturation voltage  
Low noise between 30 Hz and 15 kHz  
Complementary types:  
2
BC846W, BC847W, BC848W  
BC849W, BC850W (NPN)  
1
VSO05561  
Type  
Marking  
3As  
3Bs  
3Es  
3Fs  
3Gs  
3Js  
3Ks  
3Ls  
4As  
4Bs  
4Cs  
4Fs  
Pin Configuration  
Package  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
BC856AW  
BC856BW  
BC857AW  
BC857BW  
BC857CW  
BC858AW  
BC858BW  
BC858CW  
BC859AW  
BC859BW  
BC859CW  
BC860BW  
BC860CW  
4Gs  
1
Dec-11-2001  

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