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BC849CWE6433 PDF预览

BC849CWE6433

更新时间: 2024-02-13 09:34:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
15页 895K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,

BC849CWE6433 数据手册

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BC846...-BC850...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics  
-
250  
0.95  
9
-
-
-
MHz  
pF  
Transition frequency  
f
T
I = 10 mA, V = 5 V, f = 100 MHz  
C
CE  
-
-
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
C
cb  
eb  
V
CB  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
V
EB  
Short-circuit input impedance  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A  
h
h
h
h
kΩ  
11e  
-
-
-
2.7  
4.5  
8.7  
-
-
-
C
CE  
FE  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B  
C
CE  
FE  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C  
C
CE  
FE  
-4  
Open-circuit reverse voltage transf. ratio  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A  
10  
12e  
21e  
22e  
-
-
-
1.5  
2
3
-
-
-
C
CE  
FE  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B  
C
CE  
FE  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C  
C
CE  
FE  
Short-circuit forward current transf. ratio  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A  
-
-
-
200  
330  
600  
-
-
-
C
CE  
FE  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B  
C
CE  
FE  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C  
C
CE  
FE  
Open-circuit output admittance  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A  
µS  
-
-
-
18  
30  
60  
-
-
-
C
CE  
FE  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B  
C
CE  
FE  
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C  
C
CE  
FE  
-
1.2  
4
dB  
Noise figure  
F
V
I = 200 µA, V = 5 V, f = 1 kHz,  
C
CE  
f = 200 Hz, R = 2 k, BC849..., BC850...  
S
Equivalent noise voltage  
-
-
0.135 µV  
n
I = 200 µA, V = 5 V, R = 2 k,  
C
CE  
S
f = 10 ... 50 Hz , BC850...  
2010-06-28  
5

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