BC846-BC850
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
V
BC846
80
50
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
BC847 / BC850
BC848 / BC849
BC846
V
30
V
65
V
VCEO
BC847 / BC850
BC848 / BC849
BC846 / BC847
BC848 / BC849 / BC850
45
V
30
V
6
V
Emitter-Base Voltage
Collector Current (DC)
VEBO
Ic
5
V
100
310
200
150
+150
-40 ~ +150
mA
mW
mW
mW
°C
°C
SOT-23
Collector Dissipation
PD
SOT-323
SOT-523
Junction Temperature
Storage Temperature
TJ
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=30V, IE=0
MIN TYP MAX UNIT
Collector Cut-Off Current
DC Current Gain
15
nA
hFE
VCE=5.0V, Ic=2.0mA
Ic=10mA,IB=0.5mA
Ic=100mA,IB=5.0mA
Ic=10mA,IB=0.5mA
Ic=100mA,IB=5.0mA
VCE=5.0V,Ic=2.0mA
VCE=5.0V,Ic=10mA
110
800
250
90
mV
mV
mV
mV
mV
mV
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
VCE(SAT)
VBE(SAT)
VBE(ON)
fT
200 600
700
900
580 660 700
720
VCE=5.0V,Ic=10mA
Current Gain Bandwidth Product
300
MHz
f=100MHz
Output Capacitance
Input Capacitance
Cob
Cib
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=5V, Ic=200μA,
f=1KHz, RG=2KΩ
3.5
9
6
pF
pF
dB
dB
dB
dB
BC846/BC847/BC848
2
10
4
BC849/BC850
Noise Figure
1.2
1.4
1.4
NF
BC849
VCE=5V, IC=200μA,
4
RG=2KΩ, f=30~15000Hz
BC850
3
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
110-220
200-450
420-800
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R206-027,F
www.unisonic.com.tw