5秒后页面跳转
BC848-X-AN3-R PDF预览

BC848-X-AN3-R

更新时间: 2022-10-15 03:27:08
品牌 Logo 应用领域
友顺 - UTC 开关放大器
页数 文件大小 规格书
5页 234K
描述
SWITCHING AND AMPLIFIER APPLICATIONS

BC848-X-AN3-R 数据手册

 浏览型号BC848-X-AN3-R的Datasheet PDF文件第1页浏览型号BC848-X-AN3-R的Datasheet PDF文件第2页浏览型号BC848-X-AN3-R的Datasheet PDF文件第4页浏览型号BC848-X-AN3-R的Datasheet PDF文件第5页 
BC846-BC850  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
V
BC846  
80  
50  
Collector-Base Voltage  
Collector-Emitter Voltage  
VCBO  
BC847 / BC850  
BC848 / BC849  
BC846  
V
30  
V
65  
V
VCEO  
BC847 / BC850  
BC848 / BC849  
BC846 / BC847  
BC848 / BC849 / BC850  
45  
V
30  
V
6
V
Emitter-Base Voltage  
Collector Current (DC)  
VEBO  
Ic  
5
V
100  
310  
200  
150  
+150  
-40 ~ +150  
mA  
mW  
mW  
mW  
°C  
°C  
SOT-23  
Collector Dissipation  
PD  
SOT-323  
SOT-523  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=30V, IE=0  
MIN TYP MAX UNIT  
Collector Cut-Off Current  
DC Current Gain  
15  
nA  
hFE  
VCE=5.0V, Ic=2.0mA  
Ic=10mA,IB=0.5mA  
Ic=100mA,IB=5.0mA  
Ic=10mA,IB=0.5mA  
Ic=100mA,IB=5.0mA  
VCE=5.0V,Ic=2.0mA  
VCE=5.0V,Ic=10mA  
110  
800  
250  
90  
mV  
mV  
mV  
mV  
mV  
mV  
Collector-Emitter Saturation Voltage  
Collector-Base Saturation Voltage  
Base-Emitter On Voltage  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
fT  
200 600  
700  
900  
580 660 700  
720  
VCE=5.0V,Ic=10mA  
Current Gain Bandwidth Product  
300  
MHz  
f=100MHz  
Output Capacitance  
Input Capacitance  
Cob  
Cib  
VCB=10V, IE=0, f=1.0MHz  
VEB=0.5V, IC=0, f=1.0MHz  
VCE=5V, Ic=200μA,  
f=1KHz, RG=2K  
3.5  
9
6
pF  
pF  
dB  
dB  
dB  
dB  
BC846/BC847/BC848  
2
10  
4
BC849/BC850  
Noise Figure  
1.2  
1.4  
1.4  
NF  
BC849  
VCE=5V, IC=200μA,  
4
RG=2K, f=30~15000Hz  
BC850  
3
„
CLASSIFICATION OF hFE  
RANK  
A
B
C
RANGE  
110-220  
200-450  
420-800  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R206-027,F  
www.unisonic.com.tw  

与BC848-X-AN3-R相关器件

型号 品牌 描述 获取价格 数据表
BC849 SEMTECH NPN Silicon Epitaxial Transistor

获取价格

BC849 DCCOM TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

获取价格

BC849 UTC SWITCHING AND AMPLIFIER APPLICATION

获取价格

BC849 VISHAY Small Signal Transistors (NPN)

获取价格

BC849 KEC EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

获取价格

BC849 PANJIT NPN GENERAL PURPOSE TRANSISTORS

获取价格

您还可以找