Datasheet > BC847CW

BC847CW

更新时间： 2024-09-27 06:41:39

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	50K
描述
NPN General Purpose Transistor

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中文翻译

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数据手册

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BC847CW 数据手册

SMD Type

TransistIoCrs

NPN General Purpose Transistor

BC846W,BC847W,BC848W

Features

Low current (max. 100 mA).

Low voltage (max. 65 V).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

BC846W BC847W BC848W

Unit

Collector-emitter voltage

Emitter-base voltage

100

Collector current

200

Peak collector current

I^CM

200

Peak base current

I^BM

200

Total power dissipation

Junction temperature

P^tot

150

T^j

-65 to +150

625

Storage temperature

Tstg

Operating ambient temperature

Thermal resistance from junction to ambient

Ramb

Rth j-a

K/W

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