5秒后页面跳转
BC80740 PDF预览

BC80740

更新时间: 2024-02-17 15:27:04
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关放大器晶体管光电二极管
页数 文件大小 规格书
6页 74K
描述
Switching and Amplifier Applications

BC80740 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):170JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC80740 数据手册

 浏览型号BC80740的Datasheet PDF文件第2页浏览型号BC80740的Datasheet PDF文件第3页浏览型号BC80740的Datasheet PDF文件第4页浏览型号BC80740的Datasheet PDF文件第5页浏览型号BC80740的Datasheet PDF文件第6页 
BC807/BC808  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC817/BC818  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CES  
: BC807  
: BC808  
-50  
-30  
V
V
CEO  
EBO  
: BC807  
: BC808  
-45  
-25  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
-5  
-800  
V
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
-310  
C
T
T
150  
J
-65 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I = -10mA, I =0  
CEO  
CES  
EBO  
C
B
: BC807  
: BC808  
-45  
-25  
V
V
BV  
BV  
Collector-Emitter Breakdown Voltage  
I = -0.1mA, V =0  
C BE  
: BC807  
: BC808  
-50  
-30  
V
V
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
I = -0.1mA, I =0  
-5  
V
E
C
I
I
V
= -25V, V =0  
-100  
-100  
630  
nA  
nA  
CES  
EBO  
CE  
EB  
BE  
V
= -4V, I =0  
C
h
h
V
V
= -1V, I = -100mA  
100  
60  
FE1  
FE2  
CE  
CE  
C
= -1V, I = -300mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -500mA, I = -50mA  
-0.7  
-1.2  
V
V
CE  
C
B
V
= -1V, I = -300mA  
C
BE  
CE  
f
Current Gain Bandwidth Product  
V
= -5V, I = -10mA  
100  
MHz  
T
CE  
C
f=50MHz  
C
Output Capacitance  
V
= -10V, f=1MHz  
12  
pF  
ob  
CB  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

与BC80740相关器件

型号 品牌 描述 获取价格 数据表
BC807-40 PANJIT PNP GENERAL PURPOSE TRANSISTORS

获取价格

BC807-40 WEITRON General Purpose Transistor

获取价格

BC807-40 MCC PNP Silicon General Purpose Transistors

获取价格

BC807-40 RECTRON SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

获取价格

BC807-40 NXP PNP general purpose transistor

获取价格

BC807-40 INFINEON PNP Silicon AF Transistors (For general AF applications High collector current High curren

获取价格