Nexperia
BC807L; BC807LW
45 V, 500 mA PNP general-purpose transistors
Symbol
Parameter
Conditions
Min
80
-
Typ
-
Max
Unit
MHz
pF
fT
transition frequency
collector capacitance
VCE = -5 V; IC = -10 mA; f = 100 MHz
VCB = -10 V; IE = ie = 0 A; f = 1 MHz
-
-
Cc
5.5
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
aaa-027822
aaa-027824
400
-1.2
h
FE
V
BEsat
(V)
300
(1)
-0.8
-0.4
0
(1)
(2)
(3)
200
100
0
(2)
(3)
(4)
(4)
-1
-10
2
3
-1
-10
2
3
-1
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I (mA)
C
C
VCE = -1 V
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = -40 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 85 °C
(4) Tamb = 150 °C
Figure 1.ꢀBC807-16L, BC807-16LW: DC current gain as a Figure 2.ꢀBC807-16L, BC807-16LW: Base-emitter
function of collector current; typical values
saturation voltage as a function of collector current;
typical values
BC807L_BC807LW
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Product data sheet
Rev. 1 — 5 January 2018
5 / 16