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BC807-25LT1G PDF预览

BC807-25LT1G

更新时间: 2024-01-19 17:00:41
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管PC
页数 文件大小 规格书
4页 63K
描述
General Purpose Transistors(PNP Silicon)

BC807-25LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.61
Samacsys Confidence:2Samacsys Status:Released
Samacsys PartID:249737Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT PNPSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08 ISSUE AR_1Samacsys Released Date:2018-02-23 12:08:31
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):160JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC807-25LT1G 数据手册

 浏览型号BC807-25LT1G的Datasheet PDF文件第2页浏览型号BC807-25LT1G的Datasheet PDF文件第3页浏览型号BC807-25LT1G的Datasheet PDF文件第4页 
BC807−16LT1,  
BC807−25LT1, BC807−40LT1  
General Purpose  
Transistors  
PNP Silicon  
http://onsemi.com  
Features  
COLLECTOR  
3
Pb−Free Packages are Available  
1
BASE  
MAXIMUM RATINGS  
Rating  
Collector - Emitter Voltage  
Collector - Base Voltage  
Emitter - Base Voltage  
Symbol  
Value  
−45  
Unit  
V
2
EMITTER  
V
CEO  
V
CBO  
V
EBO  
−50  
V
−5.0  
−500  
V
MARKING  
DIAGRAM  
Collector Current − Continuous  
I
C
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
3
3
SOT−23  
CASE 318  
STYLE 6  
xxxD  
1
2
1
2
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
xxx  
D
= 5A (BC807−16LT1)  
5B1 (BC807−25LT1)  
5C (BC807−40LT1)  
= Date Code  
Total Device Dissipation FR5 Board,  
(Note 1) T = 25°C  
Derate above 25°C  
P
D
225  
1.8  
mW  
mW/°C  
A
Thermal Resistance, Junction−to−Ambient  
Total Device Dissipation Alumina Substrate,  
R
556  
°C/W  
q
JA  
P
D
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
(Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
55 to  
+150  
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 5  
BC807−16LT1/D  
 

BC807-25LT1G 替代型号

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SBC807-25LT1G ONSEMI

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