Nexperia
BC54PA-Q series
45 V, 1 A NPN medium power transistors
10. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V(BR)CBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A
45
-
-
-
-
V
V
V
V(BR)CEO
V(BR)EBO
ICBO
collector-emitter
breakdown voltage
IC = 2 mA; IB = 0 A
45
5
-
-
emitter-base
breakdown voltage
IE = 100 µA; IC = 0 A
collector-base
cut-off current
VCB = 30 V; IE = 0 A
-
-
-
-
-
-
100
10
nA
µA
nA
VCB = 30 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
IEBO
hFE
emitter-base
cut-off current
100
DC current gain
BC54PA-Q
VCE = 2 V; IC = 5 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 5 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 5 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 500 mA
IC = 500 mA; IB = 50 mA
[1] 63
-
-
-
-
-
-
-
-
-
-
-
63
40
250
-
BC54-10PA-Q
BC54-16PA-Q
[1] 63
63
-
160
40
-
[1] 63
-
100
250
-
40
-
VCEsat
collector-emitter
saturation voltage
[1]
[1]
0.5
V
VBE
Cc
fT
base-emitter voltage
collector capacitance
transition frequency
VCE = 2 V; IC = 500 mA
-
-
1
-
V
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
VCE = 5 V; IC = 50 mA; f = 100 MHz
-
6
pF
100
180
-
MHz
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
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BC54PA-Q_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 1 — 2 May 2022
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