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BC54PA-Q PDF预览

BC54PA-Q

更新时间: 2023-09-03 20:29:17
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 235K
描述
45 V, 1 A NPN medium power transistorsProduction

BC54PA-Q 数据手册

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Nexperia  
BC54PA-Q series  
45 V, 1 A NPN medium power transistors  
10. Characteristics  
Table 7. Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
V(BR)CBO  
collector-base  
breakdown voltage  
IC = 100 µA; IE = 0 A  
45  
-
-
-
-
V
V
V
V(BR)CEO  
V(BR)EBO  
ICBO  
collector-emitter  
breakdown voltage  
IC = 2 mA; IB = 0 A  
45  
5
-
-
emitter-base  
breakdown voltage  
IE = 100 µA; IC = 0 A  
collector-base  
cut-off current  
VCB = 30 V; IE = 0 A  
-
-
-
-
-
-
100  
10  
nA  
µA  
nA  
VCB = 30 V; IE = 0 A; Tj = 150 °C  
VEB = 5 V; IC = 0 A  
IEBO  
hFE  
emitter-base  
cut-off current  
100  
DC current gain  
BC54PA-Q  
VCE = 2 V; IC = 5 mA  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 500 mA  
VCE = 2 V; IC = 5 mA  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 500 mA  
VCE = 2 V; IC = 5 mA  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 500 mA  
IC = 500 mA; IB = 50 mA  
[1] 63  
-
-
-
-
-
-
-
-
-
-
-
63  
40  
250  
-
BC54-10PA-Q  
BC54-16PA-Q  
[1] 63  
63  
-
160  
40  
-
[1] 63  
-
100  
250  
-
40  
-
VCEsat  
collector-emitter  
saturation voltage  
[1]  
[1]  
0.5  
V
VBE  
Cc  
fT  
base-emitter voltage  
collector capacitance  
transition frequency  
VCE = 2 V; IC = 500 mA  
-
-
1
-
V
VCB = 10 V; IE = ie = 0 A; f = 1 MHz  
VCE = 5 V; IC = 50 mA; f = 100 MHz  
-
6
pF  
100  
180  
-
MHz  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
©
BC54PA-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 1 — 2 May 2022  
7 / 13  
 
 

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