BC 546 ... BC 549
NPN
General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistors
Power dissipation – Verlustleistung
500 mW
Plastic case
TO-92
(10D3)
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Pinning
Standard Lieferform gegurtet in Ammo-Pack
1 = C 2 = B 3 = E
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 546
65 V
85 V
80 V
6 V
BC 547
45 V
50 V
50 V
6 V
500 mW 1)
100 mA
200 mA
200 mA
200 mA
150ꢀC
BC 548/549
30 V
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
B shorted
E open
VCE0
VCES
VCB0
VEB0
Ptot
IC
ICM
IBM
- IEM
Tj
30 V
30 V
5 V
C open
TS
- 65…+ 150ꢀC
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 ꢀA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 100 mA
hFE
hFE
hFE
typ. 90
110...220
typ. 120
typ. 150
200...450
typ. 200
typ. 270
420...800
typ.400
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverst.
Input impedance – Eingangsimpedanz
Output admittance – Ausgangsleitwert
hfe
hie
hoe
typ. 220
1.6...4.5 kꢁ
18 < 30 ꢀS
typ. 330
3.2...8.5 kꢁ
30 < 60 ꢀS
typ. 600
6...15 kꢁ
60 < 110 ꢀS
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
6
01.11.2003