Datasheet > BC517_V01

BC517_V01

更新时间： 2024-01-31 04:32:52

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	621K
描述
NPN Darlington Transistor

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BC517_V01 数据手册

BC517

NPN Darlington Transistor

Features

• This device is designed for applications requiring extremely

high current gain at currents to 1.0 A.

TO-92

• Sourced from process 05.

1. Collector

2. Base

3. Emitter

Straight Lead

Bulk Packing

Bent Lead

Tape & Reel

Ammo Packing

Ordering Information

Part Number

Top Mark

Package

TO-92 3L (Bent Lead)

Packing Method

BC517-D74Z

BC517

Ammo

Absolute Maximum Ratings^{(1), (2)}

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T_A= 25°C unless otherwise noted.

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

1.2

T_J, T_STGOperating and Storage Junction Temperature Range

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

-55 to +150

°C

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty-cycle operations.

September-2017, Rev. 2

Publication Order Number:

BC517-D74Z/D

12 3 4 5 6

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