Datasheet > BC517-HAF

BC517-HAF

更新时间： 2023-12-06 20:01:48

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
1页	21K
描述
达林顿三极管

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数据手册

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BC517-HAF 数据手册

BC517-HAF

NPN Silicon Darlington Transistor

Collector

Features

• Halogen and Antimony Free(HAF), RoHS compliant

Base

Emitter

1. Collector 2. Base 3. Emitter

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CES

V_EBO

I_C

500

Total Power Dissipation

Junction Temperature

Storage Temperature Range

P_tot

T_j

625

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

h_FE

I_CBO

Min.

Typ.

Max.

Unit

DC Current Gain

30,000

at V_CE= 2 V, I_C= 20 mA

Collector Base Cutoff Current

at V_CB= 30 V

Collector Emitter Cutoff Current

at V_CE= 30 V

Emitter Base Cutoff Current

at V_EB= 10 V

Collector Base Breakdown Voltage

at I_C= 100 µA

Collector Emitter Breakdown Voltage

at I_C= 2 mA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Collector Emitter Saturation Voltage

at I_C= 100 mA, I_B= 0.1 mA

100

I_CES

500

I_EBO

100

V_(BR)CBO

V_(BR)CES

V_(BR)EBO

V_CE(sat)

V_BE(on)

f_T

Base Emitter On Voltage

at V_CE= 5 V, I_C= 10 mA

Current Gain Bandwidth Product

1.4

200

MHz

at V_CE= 5 V, I_C= 10 mA, f = 100 MHz

Dated: 22/03/2019 Rev: 01

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