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BC517-D74Z PDF预览

BC517-D74Z

更新时间: 2024-02-09 04:16:21
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
6页 621K
描述
NPN Darlington Transistor

BC517-D74Z 技术参数

是否无铅:不含铅生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
风险等级:0.68Is Samacsys:N
最大集电极电流 (IC):1.2 A集电极-发射极最大电压:30 V
配置:DARLINGTON最小直流电流增益 (hFE):30000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BC517-D74Z 数据手册

 浏览型号BC517-D74Z的Datasheet PDF文件第2页浏览型号BC517-D74Z的Datasheet PDF文件第3页浏览型号BC517-D74Z的Datasheet PDF文件第4页浏览型号BC517-D74Z的Datasheet PDF文件第5页浏览型号BC517-D74Z的Datasheet PDF文件第6页 
BC517  
NPN Darlington Transistor  
Features  
• This device is designed for applications requiring extremely  
high current gain at currents to 1.0 A.  
TO-92  
• Sourced from process 05.  
1. Collector  
2. Base  
3. Emitter  
1
1
2
2
3
3
Straight Lead  
Bulk Packing  
Bent Lead  
Tape & Reel  
Ammo Packing  
Ordering Information  
Part Number  
Top Mark  
Package  
TO-92 3L (Bent Lead)  
Packing Method  
BC517-D74Z  
BC517  
Ammo  
Absolute Maximum Ratings(1), (2)  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
30  
40  
10  
V
V
Collector Current - Continuous  
1.2  
A
TJ, TSTG Operating and Storage Junction Temperature Range  
Notes:  
1. These ratings are based on a maximum junction temperature of 150°C.  
-55 to +150  
°C  
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-  
duty-cycle operations.  
© 2005 Semiconductor Components Industries, LLC.  
September-2017, Rev. 2  
Publication Order Number:  
BC517-D74Z/D  

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