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BC446B PDF预览

BC446B

更新时间: 2024-02-11 10:24:57
品牌 Logo 应用领域
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页数 文件大小 规格书
4页 62K
描述
PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BC446B 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
风险等级:5.77Is Samacsys:N
最大集电极电流 (IC):0.3 A配置:SINGLE
最小直流电流增益 (hFE):90JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC446B 数据手册

 浏览型号BC446B的Datasheet PDF文件第1页浏览型号BC446B的Datasheet PDF文件第3页浏览型号BC446B的Datasheet PDF文件第4页 
SILICON PLANAR EPITAXIAL TRANSISTORS  
BC 446, A, B  
BC 448, A, B  
BC 450, A, B  
TO-92  
Plastic Package  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
TYP  
MAX  
UNITS  
BVCEO * IC=1mA,IB=0  
Collector Emitter BreakdownVoltage  
BC446  
BC448  
BC450  
60  
80  
100  
V
V
V
BVCBO IC=100uA, IE =0  
Collector Base Breakdown Voltage  
BC446  
BC448  
BC450  
60  
80  
100  
5
V
V
V
V
BVEBO IE=10uA, IC=0  
ICBO  
Emitter Base Breakdown Voltage  
Collector-Cut off Current  
VCB =40V, IE =0  
BC446  
BC448  
BC450  
100  
100  
100  
nA  
nA  
nA  
VCB =60V, IE =0  
CB =80V, IE =0  
V
hFE*  
DC Current Gain  
IC=2mA,VCE=5V  
IC=2mA,VCE=5V  
NON SUFFIX  
50  
120  
180  
50  
460  
220  
460  
A
B
NON SUFFIX  
A
B
100  
160  
IC=100mA,VCE=5V  
NON SUFFIX  
50  
60  
90  
A
B
VCE(sat) IC=100mA,IB=10mA  
Collector Emitter Saturation Voltage  
0.25  
V
VBE(sat) IC=100mA,IB=10mA  
VBE(on) IC=2mA,VCE =5V  
IC=100mA,VCE =5V*  
Base Emitter Saturation Voltage  
Base Emitter On Voltage  
0.85  
V
V
V
0.55  
100  
0.70  
1.2  
DYNAMICS CHARACTERISTICS  
Transition Frequency  
fT  
IC=50mA, VCE=5V  
f=100MHz  
MHz  
Pulse Test : Pulse width < 300µs, Duty Cycle <2%.  
Continental Device India Limited  
Data Sheet  
Page 2 of 4  

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