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BC183RLRM PDF预览

BC183RLRM

更新时间: 2024-02-26 15:11:06
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体放大器晶体管
页数 文件大小 规格书
4页 115K
描述
100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC183RLRM 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.64
Is Samacsys:N最大集电极电流 (IC):0.1 A
基于收集器的最大容量:5 pF集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):80
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN功耗环境最大值:1 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):240 MHzVCEsat-Max:0.6 V
Base Number Matches:1

BC183RLRM 数据手册

 浏览型号BC183RLRM的Datasheet PDF文件第2页浏览型号BC183RLRM的Datasheet PDF文件第3页浏览型号BC183RLRM的Datasheet PDF文件第4页 
Order this document  
by BC182/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC BC BC  
182 183 184  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
50  
60  
30  
45  
30  
45  
Vdc  
6.0  
100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 2.0 mA, I = 0)  
V
V
V
(BR)CEO  
BC182  
BC183  
BC184  
50  
30  
30  
C
B
CollectorBase Breakdown Voltage  
(I = 10 A, I = 0)  
V
(BR)CBO  
BC182  
BC183  
BC184  
60  
45  
45  
C
E
EmitterBase Breakdown Voltage  
(I = 100 A, I = 0)  
V
6.0  
V
(BR)EBO  
E
C
Collector Cutoff Current  
I
nA  
CBO  
(V  
CB  
(V  
CB  
= 50 V, V  
= 30 V, V  
= 0)  
= 0)  
BC182  
BC183  
BC184  
0.2  
0.2  
0.2  
15  
15  
15  
BE  
BE  
Emitter–Base Leakage Current  
(V = 4.0 V, I = 0)  
I
15  
nA  
EBO  
EB  
C
Motorola, Inc. 1996  

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