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BC178A PDF预览

BC178A

更新时间: 2024-02-15 21:19:19
品牌 Logo 应用领域
COMSET 晶体音频放大器晶体管
页数 文件大小 规格书
3页 151K
描述
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

BC178A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.18最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified参考标准:CECC
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
VCEsat-Max:0.2 VBase Number Matches:1

BC178A 数据手册

 浏览型号BC178A的Datasheet PDF文件第2页浏览型号BC178A的Datasheet PDF文件第3页 
PNP BC177 – BC178 – BC179  
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS  
The BC177,BC178 and BC179 are silicon planar epitaxial PNP transistors mounted in TO-18  
metal package.  
They are suitable for use in drive audio stages, low-noise input audio stages and as low power,  
high gain general purpose transistors.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
BC177 BC178 BC179  
Symbol  
Unit  
VCEO  
VCBO  
VEBO  
IC  
ICM  
PD  
Collector-Emitter Voltage (IB =0)  
Collector-Base Voltage (IE =0)  
Emitter-Base Voltage (IC =0)  
Collector Current  
-50  
-45  
-30  
-25  
-5  
-100  
-200  
-25  
-20  
V
V
V
mA  
mA  
mW  
°C  
°C  
Collector Peak Current  
Total Power Dissipation  
Junction Temperature  
@ Tamb = 25°  
300  
175  
-65 to +150  
TJ  
TStg  
Storage Temperature range  
ELECTRICAL CHARACTERISTICS  
Tj=25°C unless otherwise specified  
Symbol  
ICBO  
Ratings  
Test Condition(s) Min  
Typ  
Max  
Unit  
BC177  
BC178  
BC179  
BC177  
BC178  
BC179  
BC177  
BC178  
BC179  
BC177  
BC178  
BC179  
BC177  
BC178  
BC179  
VCB =-20 V  
IE = 0  
-
-
-1  
-100  
nA  
Collector Cutoff Current  
VCB = -20 V  
IE = 0 V  
Tj = 150°C  
-
-10  
µA  
V
-45  
-25  
-20  
-50  
-30  
-25  
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter  
Breakdown Voltage  
IC = -2 mA  
IB = 0  
VCEO  
VCBO  
VEBO  
Collector-Base  
Breakdown Voltage  
IC = -10 µA  
VBE = 0  
V
Emitter-Base Breakdown IE = -10 µA  
Voltage IC = 0  
-5  
V
18/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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