生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | Is Samacsys: | N |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1 V | JEDEC-95代码: | DO-35 |
JESD-30 代码: | O-LALF-W2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 120 V |
最大反向恢复时间: | 0.06 µs | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BAY80T50R | TI |
获取价格 |
120V, SILICON, SIGNAL DIODE, DO-35 | |
BAY80-TAP | VISHAY |
获取价格 |
Small Signal Switching Diode, High Voltage | |
BAY80-TR | VISHAY |
获取价格 |
Small Signal Switching Diode, High Voltage | |
BAY80X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, | |
BAY82 | FAIRCHILD |
获取价格 |
Ultra Fast Switching Diodes | |
BAY82 | NSC |
获取价格 |
DIODE 12 V, SILICON, SIGNAL DIODE, DO-7, Signal Diode | |
BAY82 | TI |
获取价格 |
12V, SILICON, SIGNAL DIODE, DO-7 | |
BAY82.TR | TI |
获取价格 |
12V, SILICON, SIGNAL DIODE, DO-7 | |
BAY82T26A | TI |
获取价格 |
12V, SILICON, SIGNAL DIODE, DO-7 | |
BAY82T26R | TI |
获取价格 |
12V, SILICON, SIGNAL DIODE, DO-7 |