BAV99W
Dual Series Chips
Surface Mount Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
A
L
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
3
S
Top View
B
1
2
For General Purpose Switching Applications
High Conductance
V
G
ANODE
CATHODE
1
C
3
2
ANODE
SC-70
H
J
D
CATHODE
SOT-323
K
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
70
Unit
Vdc
Reverse Voltage
V
R
SOT-323(SC-70)
Dim
Min
Max
Forward Current
I
215
500
mAdc
mAdc
F
A
B
C
D
G
H
J
1.800 2.200
1.150 1.350
0.800 1.000
0.300 0.400
1.200 1.400
0.000 0.100
0.100 0.250
0.350 0.500
0.590 0.720
2.000 2.400
0.280 0.420
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
I
FM(surge)
Symbol
Max
Unit
(1)
Total Device Dissipation FR–5 Board
P
200
mW
D
T
= 25°C
A
Derate above 25°C
1.6
625
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
R
JA
D
K
L
Total Device Dissipation
(2)
P
Alumina Substrate,
T = 25°C
A
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
S
V
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
JA
All Dimension in mm
T , T
stg
–65 to +150
J
BAV99W = A7, KJG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)
70
—
Vdc
(I
(BR)
= 100 µAdc)
Reverse Voltage Leakage Current
(V = 25 Vdc, T = 150°C)
I
R
µAdc
—
—
—
30
2.5
50
R
J
(V = 70 Vdc)
R
(V = 70 Vdc, T = 150°C)
R
J
Diode Capacitance
(V = 0, f = 1.0 MHz)
R
C
V
—
1.5
pF
D
Forward Voltage
mVdc
F
(I = 1.0 mAdc)
—
—
—
—
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Reverse Recovery Time
t
rr
—
6.0
ns
(I = I = 10 mAdc, I
= 1.0 mAdc) (Figure 1) R = 100 Ω
L
F
R
R(REC)
1. FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev. B
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