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BAV99LT1/D PDF预览

BAV99LT1/D

更新时间: 2024-09-24 23:34:31
品牌 Logo 应用领域
其他 - ETC 二极管开关
页数 文件大小 规格书
4页 54K
描述
Dual Series Switching Diode

BAV99LT1/D 数据手册

 浏览型号BAV99LT1/D的Datasheet PDF文件第2页浏览型号BAV99LT1/D的Datasheet PDF文件第3页浏览型号BAV99LT1/D的Datasheet PDF文件第4页 
BAV99LT1  
Preferred Device  
Dual Series  
Switching Diode  
MAXIMUM RATINGS (Each Diode)  
Rating  
Reverse Voltage  
Symbol  
Value  
70  
Unit  
Vdc  
mAdc  
mAdc  
V
http://onsemi.com  
V
R
Forward Current  
I
F
215  
500  
70  
ANODE  
CATHODE  
2
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I
FM(surge)  
1
V
I
RRM  
3
Average Rectified Forward Current  
(Note 1.)  
715  
mA  
CATHODE/ANODE  
F(AV)  
(averaged over any 20 ms period)  
Repetitive Peak Forward Current  
I
450  
mA  
A
FRM  
Non–Repetitive Peak Forward Current  
I
FSM  
MARKING DIAGRAM  
3
t = 1.0 ms  
t = 1.0 ms  
t = 1.0 S  
2.0  
1.0  
0.5  
1
A7 M  
2
THERMAL CHARACTERISTICS  
Characteristic  
CASE 318  
SOT–23  
STYLE 11  
Symbol  
Max  
Unit  
A7 = Device Code  
M = Date Code  
Total Device Dissipation  
P
D
225  
mW  
FR–5 Board (Note 1.) T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
556  
q
JA  
ORDERING INFORMATION  
Total Device Dissipation  
Alumina Substrate (Note 2.)  
P
D
300  
mW  
Device  
Package  
Shipping  
T = 25°C  
Derate above 25°C  
A
BAV99LT1  
SOT–23  
3000/Tape & Reel  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
417  
q
JA  
Preferred devices are recommended choices for future use  
and best overall value.  
Junction and Storage  
Temperature Range  
T , T  
–65 to  
+150  
°C  
J
stg  
OFF CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Vdc  
Reverse Breakdown Voltage (I  
= 100 µA)  
V
(BR)  
70  
(BR)  
Reverse Voltage Leakage Current (V = 70 Vdc)  
I
R
2.5  
30  
50  
mAdc  
R
(V = 25 Vdc, T = 150°C)  
R
J
(V = 70 Vdc, T = 150°C)  
R
J
Diode Capacitance (V = 0, f = 1.0 MHz)  
C
V
1.5  
pF  
R
D
Forward Voltage (I = 1.0 mAdc)  
715  
855  
1000  
1250  
mVdc  
F
F
(I = 10 mAdc)  
F
(I = 50 mAdc)  
F
(I = 150 mAdc)  
F
Reverse Recovery Time (I = I = 10 mAdc, i  
= 1.0 mAdc) (Figure 1) R = 100 W  
t
rr  
6.0  
ns  
V
F
R
R(REC)  
L
Forward Recovery Voltage (I = 10 mA, t = 20 ns)  
V
FR  
1.75  
F
r
1. FR–5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
September, 2000 – Rev. 1  
BAV99LT1/D  

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