BAV99LT1
Preferred Device
Dual Series
Switching Diode
MAXIMUM RATINGS (Each Diode)
Rating
Reverse Voltage
Symbol
Value
70
Unit
Vdc
mAdc
mAdc
V
http://onsemi.com
V
R
Forward Current
I
F
215
500
70
ANODE
CATHODE
2
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
I
FM(surge)
1
V
I
RRM
3
Average Rectified Forward Current
(Note 1.)
715
mA
CATHODE/ANODE
F(AV)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
I
450
mA
A
FRM
Non–Repetitive Peak Forward Current
I
FSM
MARKING DIAGRAM
3
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
2.0
1.0
0.5
1
A7 M
2
THERMAL CHARACTERISTICS
Characteristic
CASE 318
SOT–23
STYLE 11
Symbol
Max
Unit
A7 = Device Code
M = Date Code
Total Device Dissipation
P
D
225
mW
FR–5 Board (Note 1.) T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
Junction to Ambient
R
556
q
JA
ORDERING INFORMATION
Total Device Dissipation
Alumina Substrate (Note 2.)
P
D
300
mW
Device
Package
Shipping
T = 25°C
Derate above 25°C
A
BAV99LT1
SOT–23
3000/Tape & Reel
2.4
mW/°C
°C/W
Thermal Resistance,
Junction to Ambient
R
417
q
JA
Preferred devices are recommended choices for future use
and best overall value.
Junction and Storage
Temperature Range
T , T
–65 to
+150
°C
J
stg
OFF CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode)
A
Characteristic
Symbol
Min
Max
Unit
Vdc
Reverse Breakdown Voltage (I
= 100 µA)
V
(BR)
70
–
(BR)
Reverse Voltage Leakage Current (V = 70 Vdc)
I
R
–
–
–
2.5
30
50
mAdc
R
(V = 25 Vdc, T = 150°C)
R
J
(V = 70 Vdc, T = 150°C)
R
J
Diode Capacitance (V = 0, f = 1.0 MHz)
C
V
–
1.5
pF
R
D
Forward Voltage (I = 1.0 mAdc)
–
–
–
–
715
855
1000
1250
mVdc
F
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Reverse Recovery Time (I = I = 10 mAdc, i
= 1.0 mAdc) (Figure 1) R = 100 W
t
rr
–
–
6.0
ns
V
F
R
R(REC)
L
Forward Recovery Voltage (I = 10 mA, t = 20 ns)
V
FR
1.75
F
r
1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
September, 2000 – Rev. 1
BAV99LT1/D