Datasheet > BAV303-T

BAV303-T

更新时间： 2024-02-25 16:42:50

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	636K
描述
Rectifier Diode,

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中文翻译

获取价格

数据手册

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BAV303-T 数据手册

M C C

BAV300

THRU

BAV303

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20736 Marilla Street Chatsworth

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Micro Commercial Components

Features

•

Saving Space

Silicon Epitaxial Planar Diodes

Hermetic Sealed Parts

Fits onto SOD-323/SOT-23 footprints

Switching Diodes

Electrical data identical with the devices BAV100…BAV103

Maximum Ratings

MICROMELF

Continuous Reverse

Voltage

BAV300

BAV301

BAV302

BAV303

50V

T_A=25℃

100V

150V

200V

V_R

Cathode Mark

Repetitive Peak Reverse

Voltage

BAV300

60V

BAV301

BAV302

BAV303

120V

200V

250V

V_RRM

T_A=25℃

Forward DC Current

250mA

625mA

1.0A

I_F

Repetitive Peak Forward

Current

f=50Hz, T_A=25℃

T_P=1s, T_j=25℃

Note (1)

I_FRM

I_FSM

R_thJA

Surge Forward Current

Thermal Resistance

Junction to Ambient

500K/W

175℃

Junction temperature

T_j

-65 to + 175℃

Storage temperature Range

T_stg

Note: (1) mounted on epoxy-glass hard tissue, Fig.4 35μm copper clad, 0.9 mm²

copper area per electrode

DIMENSIONS

Electrical Characteristics @ 25°C Unless Otherwise Specified

INCHES

MIN

Maximum Forward Voltage

DIM

MAX

.079

.008

.051

MIN

1.8

MAX

2.0

NOTE

I_F= 100mA ,T_A=25℃

V_F

1.00V

.071

.004

.047

.10

1.20

.20

1.30

Maximum Leakage current

BAV300

100nA

15μA

100nA

15μA

100nA

15μA

100nA

15μA

V_R=50V

V_R=50V, Tj=100℃

V_R=100V

BAV300

BAV301

BAV302

BAV303

V_R=100V, Tj=100℃

I_R

V_R=150V

V_R=150V, Tj=100℃

V_R=200V

SUGGESTED SOLDER

PAD LAYOUT

V_R=200V, Tj=100℃

0.039

Maximum Leakage current

BAV300

BAV301

BAV302

BAV303

60V

120V

200V

250V

I_R=100μA, t

P/T=0.01,

tP=0.3ms

V_(BR)

0.055”

Diode Capacitance

C_D

t_rr

1.5pF

50ns

V_R=0V, f=1.0MHz

Maximum Reverse recovery

time

I_F=10mA, I_R=30mA

I_rr=3.0mA, R_L=100Ω

0.030”

Differential Forward

Resistance

r_F

5.0 Ω

I_F=10mA

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Revision: 3

2006/05/28

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