Datasheet > BAV56DW-T

BAV56DW-T

更新时间： 2024-01-06 04:39:35

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	281K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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BAV56DW-T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

BAV56DW-T 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAV56DW

Micro Commercial Components

Features

•

Fast switching speed

200mW

Switching Diodes

75 Volts

Ultra-Small surface mount package

For general purpose switching applications

High conductance

Mechanical Data

•

Case: SOT-363, Molded Plastic

Marking Code: KJC

SOT-363

Maximum Ratings

Symbol

V_RM

V_RRM

V_RWM

V_R

Rating

100

Unit

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

I_O

RMS Reverse Voltage

300

150

Forward Continuous Current

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

@ t=1.0us

DIMENSIONS

I_FSM

2.0

1.0

@ t=1.0s

P_D

R_JA

Power Dissipation

Thermal Resistance Junction to Ambient Air

200

625

℃/W

℃

INCHES

T_J

Junction Temperature

-55 to +150

DIM

MIN

MAX

MIN

0.10

1.15

2.00

MAX

0.30

1.35

2.20

NOTE

.004

.045

.079

.012

.053

.087

T_STG

Storage Temperature

℃

Electrical Characteristics @ 25 C Unless Otherwise Specified

.026

0.65Nominal

Symbol

Parameter

Reverse Breakdown Voltage

(I_R=2.5µAdc)

Min

Typ

Max

Units

.012

.071

---

.035

.010

.004

.016

.087

.004

.039

.016

0.30

0.40

2.20

0.10

1.00

0.40

0.25

1.80

---

V_(BR)R

---

Forward Voltage ⁽¹⁾

I_F=1.0mAdc

0.90

0.25

0.10

---

0.715

0.855

1.0

V_F

I_F=10mAdc

I_F=50mAdc

I_F=150mAdc

1.25

Leakage Current ⁽¹⁾

(V_R=75Vdc)

---

2.5

(V_R=75Vdc, Tj=150℃)

(V_R=25Vdc, Tj=150℃)

(V_R=20Vdc)

I_R

Junction Capacitance

(V_R=0, f=1.0MHz)

Reverse Recovery Time

(I_F=10mA, I_R=10mA, Irr=0.1 x I_R

R_L=100OHMS)

C_j

t_rr

---

2.0

---

4.0

*(1) Short duration test pulse to minimize self-heating effect.

www.mccsemi.com

Revision: 1

2004/05/26

中文翻译

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