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BAT54TW-7 PDF预览

BAT54TW-7

更新时间: 2024-01-03 04:09:34
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
2页 276K
描述
Surface Mount Schottky Barrier Diode Arrays

BAT54TW-7 技术参数

生命周期:Contact Manufacturer包装说明:R-PDSO-G6
Reach Compliance Code:unknown风险等级:4.45
配置:SEPARATE, 3 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G6
元件数量:3端子数量:6
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.2 W最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAT54TW-7 数据手册

 浏览型号BAT54TW-7的Datasheet PDF文件第2页 
BAT54TW/ADW/CDW/SDW/BRW  
Surface Mount Schottky Barrier Diode Arrays  
SOT-363  
Features  
·
·
·
·
Low Forward Voltage Drop  
Fast Switching  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and  
ESD Protection  
Mechanical Data  
·
·
Case: SOT-363, Molded Plastic  
Case Material - UL Flammability Rating  
Classification 94V-0  
·
·
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
·
·
·
Orientation: See Diagrams Below  
Weight: 0.006 grams (approx.)  
Marking: See Diagrams Below & Page 2  
Dimensions in inches and (millimeters)  
AC  
1
AC  
C2  
A1  
C2  
A2  
A2  
C3  
C1  
A2  
C2  
C1  
C2  
C2  
C1  
1
AC  
2
AC  
2
A2  
C1  
C1  
C2  
A3  
A1  
A1  
A1  
C1  
A1  
A2  
A2  
A1  
BAT54SDW*  
Marking: KL8  
BAT54CDW*  
Marking: KL7  
BAT54TW  
Marking: KLA  
BAT54ADW*  
Marking: KL6  
BAT54BRW  
Marking: KLB  
*Symmetrical configuration, no orientation indicator.  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
IF  
IFRM  
IFSM  
200  
300  
mA  
mA  
Forward Continuous Current (Note 1)  
Repetitive Peak Forward Current (Note 1)  
Forward Surge Current (Note 1)  
Power Dissipation (Note 1)  
600  
mA  
@ t < 1.0s  
Pd  
200  
mW  
°C/W  
°C  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
625  
-65 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
R = 100mA  
IF = 0.1mA  
V(BR)R  
30  
Reverse Breakdown Voltage (Note 2)  
I
¾
¾
V
240  
320  
400  
500  
1000  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
mV  
Forward Voltage (Note 2)  
¾
¾
VF  
V
V
R = 25V  
R = 1.0V, f = 1.0MHz  
IR  
Reverse Leakage Current (Note 2)  
Total Capacitance  
¾
¾
¾
2.0  
10  
mA  
CT  
¾
pF  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100W  
trr  
Reverse Recovery Time  
¾
¾
5.0  
ns  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc.  
2. Short duration test pulse used to minimize self-heating effect.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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