Datasheet > BAT54A/T1

BAT54A/T1

更新时间： 2022-01-19 19:36:00

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
8页	55K
描述
DIODE KLEINSIGNAL SMD SCHOTTKY

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数据手册

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BAT54A/T1 数据手册

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT54 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

Per diode

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_R

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

storage temperature

−

I_F

200

300

600

+150

125

°C

I_FRM

I_FSM

T_stg

T_j

t_p≤ 1 s; δ ≤ 0.5

t_p< 10 ms

−65

junction temperature

−

°C

Per device

P_tot

total power dissipation

T_amb≤ 25 °C

−

230

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_{th j-a}

thermal resistance from junction to

ambient

note 1

500

K/W

Note

1. Refer to SOT23 standard mounting conditions.

CHARACTERISTICS

T_amb= 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

V_F

forward voltage

see Fig.3

I_F= 0.1 mA

I_F= 1 mA

240

µA

320

400

500

800

I_F= 10 mA

I_F= 30 mA

I_F= 100 mA

V_R= 25 V; see Fig.4

I_R

t_rr

reverse current

reverse recovery time

when switched from I_F= 10 mA

to I_R= 10 mA; R_L= 100 Ω;

measured at I_R= 1 mA;

see Fig.6

C_d

diode capacitance

f = 1 MHz; V_R= 1 V; see Fig.5

2002 Mar 04

1 234 5 6 7 8

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