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BAS70-06-V-GS18 PDF预览

BAS70-06-V-GS18

更新时间: 2024-02-15 01:23:52
品牌 Logo 应用领域
威世 - VISHAY 信号二极管小信号肖特基二极管光电二极管
页数 文件大小 规格书
5页 156K
描述
Small Signal Schottky Diodes, Single & Dual

BAS70-06-V-GS18 技术参数

是否无铅: 不含铅生命周期:Obsolete
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.36
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.41 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
最大非重复峰值正向电流:0.6 A元件数量:2
端子数量:3最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAS70-06-V-GS18 数据手册

 浏览型号BAS70-06-V-GS18的Datasheet PDF文件第2页浏览型号BAS70-06-V-GS18的Datasheet PDF文件第3页浏览型号BAS70-06-V-GS18的Datasheet PDF文件第4页浏览型号BAS70-06-V-GS18的Datasheet PDF文件第5页 
BAS70-00-V to BAS70-06-V  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single & Dual  
Features  
• These diodes feature very low turn-on  
voltage and fast switching  
• These devices are protected by a PN  
junction guard ring against excessive volt-  
age, such as electrostatic discharges  
e3  
BAS70-00-V  
BAS70-04-V  
3
3
• Lead (Pb)-free component  
Top View  
Top View  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
2
1
2
BAS70-05-V  
BAS70-06-V  
3
3
Mechanical Data  
Case: SOT23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
1
2
1
2
18439  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
Remarks  
BAS70-00-V  
BAS70-00-V-GS18 or BAS70-00-V-GS08  
BAS70-04-V-GS18 or BAS70-04-V-GS08  
BAS70-05-V-GS18 or BAS70-05-V-GS08  
BAS70-06-V-GS18 or BAS70-06-V-GS08  
73  
Tape and Reel  
BAS70-04-V  
BAS70-05-V  
BAS70-06-V  
74  
75  
76  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Repetitive peak reverse voltage  
VRRM = VRWM = VR  
70  
V
2001)  
6001)  
2001)  
Forward continuous current  
Surge forward current  
IF  
mA  
mA  
mW  
tp < 1 s  
IFSM  
Ptot  
Power dissipation1)  
1) Device on fiberglass substrate, see layout on next page  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
5001)  
125  
Thermal resistance junction to ambient air  
RthJA  
Tj  
K/W  
°C  
Junction temperature  
Storage temperature range  
Tstg  
- 65 to + 125  
°C  
1) Device on fiberglass substrate, see layout on next page  
Document Number 85702  
Rev. 1.7, 27-Sep-06  
www.vishay.com  
1

BAS70-06-V-GS18 替代型号

型号 品牌 替代类型 描述 数据表
BAS70-06-V-GS08 VISHAY

完全替代

Small Signal Schottky Diodes, Single & Dual
BAS70-06 VISHAY

完全替代

Schottky Diodes
BAS70-06-7-F DIODES

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SURFACE MOUNT SCHOTTKY BARRIER DIODE

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