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BAS70-07 PDF预览

BAS70-07

更新时间: 2024-09-30 06:41:27
品牌 Logo 应用领域
科信 - KEXIN 二极管
页数 文件大小 规格书
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描述
Schottky Barrier (Double) Diodes

BAS70-07 数据手册

  
SMD Type  
Diodes  
Schottky Barrier (Double) Diodes  
BAS70-07  
Unit: mm  
Features  
Low forward voltage  
High breakdown voltage  
Guard ring protected  
Small plastic SMD package  
Low diode capacitance.  
Absolute Maximum Ratings Ta = 25  
Parameter  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
non-repetitive peak forward current  
storage temperature  
Symbol  
VR  
Test Condition  
MIN  
MAX  
70  
Unit  
V
IF  
70  
mA  
mA  
A
IFRM  
IFSM  
Tstg  
Tj  
70  
tp  
1 s;ä  
0.5  
tp < 10 ms  
100  
+150  
150  
+150  
500  
-65  
-65  
junction temperature  
operating ambient temperature  
thermal resistance from junction to ambient  
Tamb  
Rth j-a  
K/W  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Condition  
Min  
Max  
Unit  
mV  
mV  
V
IF = 1 mA  
IF = 10 mA  
410  
750  
1
forward voltage  
reverse current  
VF  
IF = 15 mA  
VR = 50 V;note 1  
VR = 70 V;note 1  
IF = 5 mA  
100  
10  
nA  
A
IR  
charge carrier life time (Krakauer method)  
diode capacitance  
ô
100  
2
ps  
Cd  
f = 1 MHz; VR = 0  
pF  
Note  
1. Pulse test: tp = 300 ms; ä = 0.02.  
Marking  
Marking  
77  
1
www.kexin.com.cn  

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