Datasheet > BAP51-02

BAP51-02

更新时间： 2024-02-23 08:43:40

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管
页数	文件大小	规格书
2页	619K
描述
GENERAL PURPOSE PIN DIODES

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中文翻译

获取价格

数据手册

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BAP51-02 数据手册

BAP51-02

GENERAL PURPOSE PIN DIODES

S O D - 5 2 3

FEATURES

y Low diode capacitance

MARKING: A5

Low diode forward resistance

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

Symbol

Limits

Unit

Continuous reverse voltage

Continuous Forward Current

Power Dissipation (T_A=90℃)

V_R

I_F

715

Thermal Resistance from Junction to

soldering point

R_θJS

℃/W

Junction temperature

Storage temperature

T_j

-65~+150

℃

T_STG

Electrical Ratings @T_A=25℃

Parameter

Symbol

V_R

Min.

Typ.

Max. Unit

Conditions

I_R=10μA

Continuous reverse voltage

Forward voltage

V_F

1.1

Ω

I_F=50mA

Reverse current

I_R

100

V_R=50V

C_d1

C_d2

C_d3

r_D

0.4*

V_R=0V,f=1MHz

V_R=1V,f=1MHz

V_R=5V,f=1MHz

Diode capacitance

0.55

0.35

I_F=0.5mA , f=100MHz;note1

I_F=1mA , f=100MHz;note1

I_F=10mA , f=100MHz;note1

Diode forward resistance

r_D

6.5

2.5

Ω

r_D

Ω

Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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