Datasheet > BAP51-03

BAP51-03

更新时间： 2024-11-21 12:53:47

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
1页	58K
描述
Low diode capacitance Low diode forward resistance. continuous reverse voltage VR 50 V

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数据手册

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BAP51-03 数据手册

Product specification

BAP51-03

SOD-323

Unit: mm

+0.1

-0.1

+0.05

0.85

-0.05

1.7

Features

Low diode capacitance

Low diode forward resistance.

+0.1

-0.1

2.6

1.0max

0.475

0.375

Absolute Maximum Ratings Ta = 25

Parameter

continuous reverse voltage

continuous forward current

Symbol

V^R

Min

Max

Unit

I^F

P^tot

T^stg

T^j

500

+150

120

total power dissipation

storage temperature

junction temperature

Ts = 90

-65

thermal resistance from junction to soldering point

R^{th j-s}

K/W

Electrical Characteristics Ta = 25

Parameter

forward voltage

Symbol

V^F

Conditions

I^F= 50 mA

Min

Typ

Max

1.1

Unit

0.95

reverse voltage

reverse current

V^R

I^R= 10

I^R

V^R= 50 V

100

V^R= 0; f = 1 MHz

V^R= 1V; f = 1 MHz

V^R= 5V; f = 1 MHz

0.4

0.3

0.2

5.5

3.6

1.5

diode capacitance

C^d

0.55

0.35

I^F= 0.5 mA; f = 100 MHz; note 1

I^F= 1 mA; f = 100 MHz; note 1

diode forward resistance

r^D

I^F= 10 mA; f = 100 MHz; note 1

when switched from I^F= 10 mA to I^R= 6 mA;

R^L= 100 ;measured at I^R= 3 mA

charge carrier life time

Note

550

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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