Datasheet > BAP50-03

BAP50-03

更新时间： 2024-10-01 08:48:11

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管测试
页数	文件大小	规格书
2页	642K
描述
GENERAL PURPOSE PIN DIODES

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中文翻译

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数据手册

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BAP50-03 数据手册

BAP50-03

GENERAL PURPOSE PIN DIODES

FEATURES

SOD-323

y Low diode capacitance

MARKING: A81

Low diode forward resistance

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

Symbol

Limits

Unit

Continuous reverse voltage

Continuous Forward Current

Power Dissipation (T_A=90℃)

V_R

I_F

200

Thermal Resistance Junction to

Ambient

R_θJA

K/W

Junction temperature

Storage temperature

T_j

-65~+150

℃

T_STG

Electrical Ratings @T_A=25℃

Parameter

Symbol

V_R

Min.

Typ.

Max. Unit

Conditions

I_R=10µA

Continuous reverse voltage

Forward voltage

V_F

1.1

100

0.91

1.11

0.55

0.35

Ω

I_F=50mA

V_R=50V

Reverse current

I_R

C_d1A

C_d1B

C_d2

C_d3

r_D

V_R=0V,f=1MHz

Diode capacitance

V_R=1V,f=1MHz

V_R=5V,f=1MHz

I_F=0.5mA , f=100MHz; note1

I_F=1mA , f=100MHz;note1

I_F=10mA , f=100MHz;note1

Diode forward resistance

r_D

Ω

r_D

Ω

Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.

JinYu

semiconductor

www.htsemi.com

中文翻译

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