Datasheet > BAP50-04

BAP50-04

更新时间： 2024-10-01 12:53:47

品牌	Logo	应用领域
TYSEMI		二极管测试光电二极管
页数	文件大小	规格书
2页	121K
描述
Low diode capacitance. Low diode forward resistance.Continuous reverse voltage VR 50 V

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中文翻译

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BAP50-04 数据手册

Product specification

BAP50-04

SOT-23

Unit: mm

+0.1

2.9_-0.1

■ Features

● Low diode capacitance.

+0.1

0.4_-0.1

● Low diode forward resistance.

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Continuous reverse voltage

Symbol

Rating

Unit

Continuous forward current

℃

Ptot

250

Total power dissipation TS = 90℃

Storage temperature

Tstg

-65 to +150

Junction temperature

℃

150

220

Thermal resistance from junction to soldering point

Rth j-s

℃/W

■ Electrical Characteristics Ta = 25℃

Parameter

Forward voltage

Reverse voltage

Reverse current

Symbol

Test conditons

IF = 50 mA

Min

Typ Max

Unit

0.95

1.1

IR = 10 μA

VR = 50 V

100

VR = 0; f = 1 MHz

VR = 1 V; f = 1 MHz

VR = 5 V; f = 1 MHz

0.45

0.35

0.3

Diode capacitance

0.5

IF = 0.5 mA; f = 100 MHz

IF = 1 mA; f = 100 MHz

IF = 10 mA; f = 100 MHz

Diode forward resistance

■ Marking

Marking

4LP

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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