Datasheet > BA545AL

BA545AL

更新时间： 2022-11-24 21:17:28

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
8页	57K
描述
Low-leakage diode

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BA545AL 数据手册

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS45AL

FEATURES

DESCRIPTION

• Continuous reverse voltage:

max. 125 V

Epitaxial medium-speed switching diode with a low leakage current in a small

SOD80C glass SMD package.

• Repetitive peak forward current:

max. 625 mA

• Low reverse current: max. 1 nA

• Switching time: typ. 1.5 µs.

handbook, 4 columns

MAM061

APPLICATION

• Low leakage current applications.

Fig.1 Simplified outline (SOD80C) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

125

UNIT

V_RRM

V_R

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

−

125

250

625

I_F

note 1; see Fig.2

I_FRM

I_FSM

non-repetitive peak forward current square wave; T_j= 25 °C prior to

surge; see Fig.4

t_p= 1 µs

t_p= 1 ms

t_p= 1 s

−

0.5

400

+175

175

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

°C

−65

−

Note

1. Device mounted on a FR4 printed-circuit board.

1999 May 28

123 4 5 6 7 8

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