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BA545AL PDF预览

BA545AL

更新时间: 2022-11-24 21:17:28
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
8页 57K
描述
Low-leakage diode

BA545AL 数据手册

 浏览型号BA545AL的Datasheet PDF文件第1页浏览型号BA545AL的Datasheet PDF文件第2页浏览型号BA545AL的Datasheet PDF文件第3页浏览型号BA545AL的Datasheet PDF文件第5页浏览型号BA545AL的Datasheet PDF文件第6页浏览型号BA545AL的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Low-leakage diode  
BAS45AL  
GRAPHICAL DATA  
MBG523  
MBG522  
300  
300  
handbook, halfpage  
handbook, halfpage  
I
I
F
F
(mA)  
(mA)  
(1)  
(2) (3)  
200  
200  
100  
100  
0
0
0
o
0.5  
1.0  
1.5  
0
100  
200  
T
( C)  
V
(V)  
amb  
F
(1) Tj = 150 °C; typical values.  
(2) Tj = 25 °C; typical values.  
(3) Tj = 25 °C; maximum values.  
Device mounted on a FR4 printed-circuit board.  
Fig.2 Maximum permissible continuous forward  
current as a function of ambient  
temperature.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
MBG704  
2
10  
I
FSM  
(A)  
10  
1
1  
10  
2
3
4
1
10  
10  
10  
10  
t
(µs)  
p
Based on square wave currents; Tj = 25 °C prior to surge.  
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.  
1999 May 28  
4

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