BA479G, BA479S
Vishay Semiconductors
www.vishay.com
RF PIN Diodes - Single in DO-35 (DO-204AH)
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
LINKS TO ADDITIONAL RESOURCES
Case: DO-35 (DO-204AH)
3
Weight: approx. 125 mg
D
3D Models
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
TYPE
DIFFERENTIATION
CIRCUIT
PART
ORDERING CODE
R = 30 V, zr > 5 kΩ BA479G-TR or BA479G-TAP
R = 30 V, zr > 9 kΩ BA479S-TR or BA479S-TAP
TYPE MARKING
REMARKS
CONFIGURATION
BA479G
BA479S
V
V
BA479G
BA479S
Single
Tape and reel/ammopack
Tape and reel/ammopack
Single
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
UNIT
V
Reverse voltage
Forward continuous current
VR
IF
30
50
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
K/W
°C
Thermal resistance junction to ambient air
Junction temperature
l = 4 mm, TL = constant
RthJA
Tj
350
125
Storage temperature range
Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 20 mA
VF
IR
CD
rf
1
V
Reverse current
V
R = 30 V
0.05
0.5
50
μA
pF
Ω
Diode capacitance
Differential forward resistance
f = 100 MHz, VR = 0 V
f = 100 MHz, IF = 1.5 mA
BA479G
BA479S
zr
zr
5
9
kΩ
kΩ
μs
Reverse impedance
f = 100 MHz, VR = 0 V
IF = 10 mA, IR = 10 mA
Minority carrier lifetime
τ
4
Rev. 2.0, 07-Mar-2022
Document Number: 85527
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000