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BA479G, BA479S PDF预览

BA479G, BA479S

更新时间: 2023-12-06 20:10:16
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 76K
描述
RF PIN Diodes - Single in DO-35 (DO-204AH)

BA479G, BA479S 数据手册

 浏览型号BA479G, BA479S的Datasheet PDF文件第2页浏览型号BA479G, BA479S的Datasheet PDF文件第3页 
BA479G, BA479S  
Vishay Semiconductors  
www.vishay.com  
RF PIN Diodes - Single in DO-35 (DO-204AH)  
FEATURES  
• Wide frequency range 10 MHz to 1 GHz  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
APPLICATIONS  
• Current controlled HF resistance in adjustable  
attenuators  
MECHANICAL DATA  
LINKS TO ADDITIONAL RESOURCES  
Case: DO-35 (DO-204AH)  
3
D
3
Weight: approx. 125 mg  
D
3D Models  
Cathode band color: black  
Packaging codes/options:  
TR/10K per 13" reel (52 mm tape), 50K/box  
TAP/10K per ammopack (52 mm tape), 50K/box  
PARTS TABLE  
TYPE  
DIFFERENTIATION  
CIRCUIT  
PART  
ORDERING CODE  
R = 30 V, zr > 5 kΩ BA479G-TR or BA479G-TAP  
R = 30 V, zr > 9 kΩ BA479S-TR or BA479S-TAP  
TYPE MARKING  
REMARKS  
CONFIGURATION  
BA479G  
BA479S  
V
V
BA479G  
BA479S  
Single  
Tape and reel/ammopack  
Tape and reel/ammopack  
Single  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PART  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
V
Reverse voltage  
Forward continuous current  
VR  
IF  
30  
50  
mA  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
K/W  
°C  
Thermal resistance junction to ambient air  
Junction temperature  
l = 4 mm, TL = constant  
RthJA  
Tj  
350  
125  
Storage temperature range  
Tstg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Forward voltage  
IF = 20 mA  
VF  
IR  
CD  
rf  
1
V
Reverse current  
V
R = 30 V  
0.05  
0.5  
50  
μA  
pF  
Ω
Diode capacitance  
Differential forward resistance  
f = 100 MHz, VR = 0 V  
f = 100 MHz, IF = 1.5 mA  
BA479G  
BA479S  
zr  
zr  
5
9
kΩ  
kΩ  
μs  
Reverse impedance  
f = 100 MHz, VR = 0 V  
IF = 10 mA, IR = 10 mA  
Minority carrier lifetime  
τ
4
Rev. 2.0, 07-Mar-2022  
Document Number: 85527  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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